#Infineon Technologies, #BSC0902NSI, #IGBT_Module, #IGBT, BSC0902NSI Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: BSC0902NSIPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-F5Pin Count: 8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 1.62Avalanche Energy Rating (Eas): 20 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 100 ADrain Current-Max (ID): 23 ADrain-source On Resistance-Max: 0.0037 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 48 WPulsed Drain Current-Max (IDM): 400 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8