Infineon BSM200GAR120DN2 IGBT Module

Manufacturer Part Number: BSM200GAR120DN2
Rohs Code: Yes
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: MODULE-5
Pin Count: 5
Manufacturer: Infineon Technologies AG
Risk Rank: 5.61
Case Connection: ISOLATED
Collector Current-Max (IC): 290 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1400 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5