Infineon BSM200GAR120DN2 IGBT Module

Manufacturer Part Number: BSM200GAR120DN2

Rohs Code: Yes

Ihs Manufacturer: Infineon TECHNOLOGIES AG

Part Package Code: MODULE

Package Description: MODULE-5

Pin Count: 5

Manufacturer: Infineon Technologies AG

Risk Rank: 5.61

Case Connection: ISOLATED

Collector Current-Max (IC): 290 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X5

Number of Elements: 1

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 1400 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5