APTGT50SK170D1G Insulated Gate Bipolar Transistor, 70A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT50SK170D1G

IRG4BC20UDPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3; IRG4BC20UDPBF

MCC94-22io1B Silicon Controlled Rectifier, 180A I(T)RMS, 104000mA I(T), 2200V V(DRM), 2200V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN; MCC94-22io1B

VI-252-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-252-EY

VI-J4X-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J4X-CZ

V300C5H100AL DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V300C5H100AL

VI-2N2-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2N2-IW

CPT30045 Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 45V V(RRM), Silicon, PACKAGE-2; CPT30045

VI-BN2-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BN2-IW

TMA124S-L TRIAC, 400V V(DRM), 12A I(T)RMS, TO-220AB, TO-220F, 3 PIN; TMA124S-L

VUO55-16NO7 Bridge Rectifier Diode, 3 Phase, 58A, 1600V V(RRM), Silicon,; VUO55-16NO7

IXTN46N50L Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4; IXTN46N50L

STPS2545CG-TR 45 V, 25 A dual Power Schottky rectifier; STPS2545CG-TR

VI-J00-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J00-CY

FMMT549ATC Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; FMMT549ATC