FS100R12N2T4P Product details
Electrical Features
• Low VCEsat
• Tvj op = 150°C
• Trench IGBT 4
• VCEsat with positive temperature coefficient
Mechanical Features
•Al2O3 substrate with low thermal resistance
• High power and thermal cycling capability
• Integrated NTC temperature sensor
• Copper base plate
•Pre-applied Thermal Interface Material
IGBT-inverter maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :100A
Collector current Icp 1ms Tc=25°C :200A
Collector power dissipation Pc:470W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3~6 N·m
Weight Typical value 180g
