Description:
Mitsubishi IGBTMOD™Modules are designed for use in switching applications. Each module con-sists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-con-nected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery (150ns) Free-Wheel Diode
High Frequency Operation (15-20kHz)
Isolated Baseplate for Easy Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 150 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 300* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 110 Watts
Max. Mounting Torque M6 Terminal Screws 26 in-lb
Weight 500 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
