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MITSUBISHI CM50MD1-12H IGBT Module

#MITSUBISHI, #CM50MD1_12H, #IGBT_Module, #IGBT, CM50MD1-12H Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; CM50MD1-12H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 109
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CM50MD1-12H Specification

Sell CM50MD1-12H, #MITSUBISHI #CM50MD1-12H Stock, CM50MD1-12H Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; CM50MD1-12H, #IGBT_Module, #IGBT, #CM50MD1_12H
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Manufacturer Part Number: CM50MD1-12HPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X21Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 104 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,

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