#MITSUBISHI, #CM50MD1_12H, #IGBT_Module, #IGBT, CM50MD1-12H Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; CM50MD1-12H
Manufacturer Part Number: CM50MD1-12HPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X21Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 104 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,