#DYNEX, #DIM200PLM33_F, #IGBT_Module, #IGBT, DIM200PLM33-F Insulated Gate Bipolar Transistor, 200A I(C), 3300V V(BR)CES, N-Channel, P, MODULE-8; DIM200PLM33-F
Manufacturer Part Number: DIM200PLM33-F000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X9Pin Count: 8Manufacturer: Dynex SemiconductorRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 3300 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X9Number of Elements: 1Number of Terminals: 9Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 200A I(C), 3300V V(BR)CES, N-Channel, P, MODULE-8