#DYNEX, #DIM800ECM33_F, #IGBT_Module, #IGBT, DIM800ECM33-F Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, E, 9 PIN; DIM800ECM33-F
Manufacturer Part Number: DIM800ECM33-F000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-XUFM-X9Pin Count: 9Manufacturer: Dynex SemiconductorRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 3300 VConfiguration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 2Number of Terminals: 9Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 10400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, E, 9 PIN