DSEI2x61-12B IXYS 1200V 2x60A Fast Recovery Diode Module

  • DSE12X61-12B

DSEI2x61-12B Diode Module In-stock / IXYS: 1200V, 2x60A with 50ns trr. Features soft recovery for low EMI. 90-day warranty, ideal for SMPS & UPS. Global fast shipping. Get quote.

· Categories: Diode Module
· Manufacturer: IXYS
· Price: US$ 16
· Date Code: Please Verify on Quote
. Available Qty: 305
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Content last revised on November 29, 2025

DSEI2x61-12B 1200V Dual FRED Module: Engineered for High-Efficiency Power Conversion

An Engineering Overview of the DSEI2x61-12B FRED Module

Maximizing Efficiency Through Advanced Recovery Characteristics

The IXYS DSEI2x61-12B is a dual Fast Recovery Epitaxial Diode (FRED) module, architected for high-frequency power systems where efficiency and reliability are paramount. With core specifications of 1200V, 2x 60A (average forward current per diode), and a typical reverse recovery time (t_rr) of 50 ns, this device is engineered to minimize switching losses and reduce electromagnetic interference (EMI). Its key benefits include significantly lower power dissipation and the enablement of more compact thermal management solutions. For designers of high-frequency power converters, this module directly addresses the challenge of balancing speed with low-noise operation. The best-fit application for this module is as a freewheeling diode in high-frequency motor drives and switch-mode power supplies where its soft recovery characteristic is critical for system reliability and efficiency.

Application Scenarios & Value

Achieving System-Level Benefits in High-Frequency Power Conversion

The primary value of the DSEI2x61-12B is realized in demanding, high-frequency switching applications. In systems like a Switch Mode Power Supply (SMPS) or a Variable Frequency Drive (VFD), this device excels as an IGBT freewheeling diode. During the commutation phase when the IGBT turns on, a standard diode's slow and abrupt recovery can cause a large reverse current spike (I_RM). This spike not only increases the diode's own power loss but, more critically, creates significant turn-on losses in the IGBT, generating substantial heat. The DSEI2x61-12B's "soft" and fast recovery characteristic mitigates this effect dramatically. This is akin to a shock absorber in a car; instead of a sudden jolt, it provides a firm but smooth transition, preventing electrical "jolts" (voltage overshoots and ringing) that create EMI. This allows engineers to push operating frequencies higher for greater power density, reduce the size and cost of heatsinks, and simplify EMI/RFI filtering, leading to a more efficient and cost-effective overall system design. While this dual diode module is ideal for inverter stages, for the primary AC rectification stage in similar power systems, a module like the MDD95-12N1B could serve as a complementary component.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Performance

The performance of the DSEI2x61-12B is defined by a set of critical parameters that directly influence its behavior in a circuit. The specifications below are pivotal for engineers designing for high efficiency and reliability.

Parameter Symbol Conditions Value
Repetitive Peak Reverse Voltage V_RRM T_VJ = 25°C 1200 V
Average Forward Current I_FAV T_C = 80°C; per diode 60 A
Total Average Forward Current I_FAVM T_C = 80°C; parallel 120 A
Forward Voltage Drop V_F I_F = 60 A; T_VJ = 150°C typ. 2.09 V
Reverse Recovery Time t_rr I_F = 60 A; -di/dt = 300 A/µs; V_R = 540V typ. 50 ns
Peak Reverse Recovery Current I_RM I_F = 60 A; -di/dt = 300 A/µs; T_VJ = 100°C typ. 13 A
Thermal Resistance, Junction to Case R_thJC Per diode 0.7 K/W
Isolation Voltage V_ISOL 50/60 Hz, RMS 3000 V~

Download the DSEI2x61-12B datasheet for detailed specifications and performance curves.

Frequently Asked Questions (FAQ)

How does the 'soft recovery' characteristic of the DSEI2x61-12B benefit my design beyond just speed?

Soft recovery refers to the smooth, controlled manner in which the diode current returns to zero during turn-off. This prevents the high-frequency voltage ringing and overshoot common with abrupt-recovery diodes. The direct engineering benefits are significantly reduced EMI/RFI, which simplifies filter design and regulatory compliance, and enhanced reliability by minimizing voltage stress on adjacent components like IGBTs.

What is the advantage of the dual independent diode configuration in the SOT-227B package?

The dual independent topology offers significant design flexibility. The two FREDs can be used as freewheeling diodes in a half-bridge inverter leg, as two independent rectifiers, or connected in parallel for higher current capacity. The SOT-227B package provides excellent 3000V electrical isolation from the heatsink, allowing multiple modules to be mounted on a common cooling surface without extra insulating pads, which simplifies assembly and improves thermal transfer.

For which applications is the DSEI2x61-12B's low reverse recovery current (I_RM) most critical?

The low I_RM is most critical in high-frequency, hard-switched applications like boost converters for Power Factor Correction (PFC), secondary-side rectification in SMPS, and as freewheeling diodes in motor drives. In these circuits, a high I_RM directly translates into higher turn-on losses for the main switching transistor, reducing overall system efficiency and increasing thermal load. A low I_RM directly contributes to a cooler and more efficient system.

How does the avalanche rating of this diode contribute to system ruggedness?

The avalanche rating signifies the diode's ability to withstand and dissipate energy from transient reverse-voltage events that exceed its 1200V V_RRM rating, without failing. This is a crucial feature for reliability in industrial environments where voltage spikes from motor switching or grid disturbances are common. It provides a built-in safety margin, improving the overall ruggedness of the power converter. For a deeper understanding of device limits, consult resources on Safe Operating Area (SOA).

The drive for higher power density and efficiency in modern power electronics necessitates components that minimize every source of loss. The DSEI2x61-12B is strategically positioned for this trend, offering designers a tool to reduce switching losses and EMI at the source. This enables the development of more compact, reliable, and energy-efficient systems for applications ranging from industrial motor control to high-availability Uninterruptible Power Supplies (UPS), aligning with long-term goals for system-level cost reduction and performance enhancement. For further reading on related design considerations, exploring guides on mastering IGBT thermal management can provide valuable system-level context.

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