#FUJI, #ET188, #IGBT_Module, #IGBT, ET188 Power Bipolar Transistor, 100A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon; ET188
Manufacturer Part Number: ET188Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-XUFM-X2ECCN Code: EAR99Manufacturer: Fuji Electric Co LtdRisk Rank: 5.81Additional Feature: HIGH RELIABILITYCase Connection: COLLECTORCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 300 VConfiguration: DARLINGTON WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 200JESD-30 Code: R-XUFM-X2Number of Elements: 1Number of Terminals: 2Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 100A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon