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Fuji ETF81-050 IGBT Module

Fuji Electric ETF81-050: A 600V/50A Power Integrated Module (PIM). Integrates inverter, converter & brake to shrink footprint and reduce BOM for high-efficiency drives.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 21
· Date Code: 2024+
. Available Qty: 1090
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ETF81-050 Specification

Fuji Electric ETF81-050 PIM | Compact Power Integration for High-Efficiency Drives

The Fuji Electric ETF81-050 represents a paradigm shift for engineers designing compact, power-dense systems. It’s not just an IGBT; it's a highly integrated Power Integrated Module (PIM) that streamlines design, reduces assembly complexity, and enhances overall system reliability. This module is engineered for applications where space, efficiency, and performance are non-negotiable.

  • Brand: Fuji Electric
  • Model: ETF81-050
  • Core Feature: 600V/50A Power Integrated Module (PIM) with a 3-phase inverter, converter, and brake chopper.
  • Primary Benefit: Dramatically reduces system footprint and bill-of-materials (BOM) by integrating key power stages into a single, optimized package.
  • Typical Applications: Small to medium power motor drives, servo controllers, robotics, and uninterruptible power supplies (UPS).

Technical Deep-Dive: The Engineering Behind the ETF81-050

The value of the Fuji Electric ETF81-050 extends beyond its specifications. It's rooted in two fundamental engineering advantages that directly address common design pain points.

The Strategic Advantage of PIM Architecture

At its core, the ETF81-050 is a PIM (Power Integrated Module). This design philosophy co-packages the rectifier diodes, brake chopper IGBT, and the main 3-phase inverter bridge. For the system designer, this translates to tangible benefits: stray inductance is minimized, high-frequency performance is improved, and electromagnetic interference (EMI) is easier to manage. The simplified thermal interface to the heatsink also ensures more consistent and reliable heat dissipation compared to multiple discrete components.

Optimized Silicon for Superior Performance

Fuji Electric integrates its advanced trench-gate field-stop IGBT technology, meticulously engineered to balance two critical parameters. It achieves a low collector-emitter saturation voltage (VCE(sat) ), which directly reduces conduction losses and operating temperature. Simultaneously, the fast-recovery diodes (FWDs) paired with the IGBTs exhibit soft recovery characteristics, mitigating voltage overshoots and reducing the need for complex snubber circuits. This silicon-level optimization is a key factor in maximizing the efficiency of your power conversion stage.

Real-World Applications & Solved Problems

The true measure of a component is its performance in the field. Here’s how the Fuji Electric ETF81-050 delivers value in specific applications:

  • Compact Motor Drives: In applications like conveyor belts or pump controls, space is often at a premium. The ETF81-050’s integrated PIM design allows for a much smaller overall drive footprint, enabling decentralization and reducing cabinet size and cost.
  • Precision Servo Control: The low losses and optimized switching characteristics of the module result in higher efficiency and less waste heat. This thermal stability is critical in high-precision robotics and CNC machines, ensuring consistent performance and preventing thermally-induced errors for superior control accuracy. Explore our full range of IGBT modules for various power levels.
  • Small-Scale UPS Systems: Reliability is the cornerstone of any UPS. By consolidating the power stages into a single, factory-tested module, the ETF81-050 reduces the number of solder joints and potential points of failure, directly enhancing the long-term reliability of the system.

Key Technical Parameters

ParameterValue
Collector-Emitter Voltage (Vces)600V
Collector Current (Ic)50A
ConfigurationPIM (3-Phase Converter + 3-Phase Inverter + Brake)
Collector-Emitter Saturation Voltage (Vce(sat)) (Typ)1.7V @ Ic=50A
Package TypeEconoPIM™ 2
DatasheetETF81-050 Datasheet

Comparative Analysis & Selection Guidance

Engineers often weigh the ETF81-050 against building a similar circuit with discrete IGBTs and diodes. While a discrete approach offers layout flexibility, the PIM architecture of the ETF81-050 provides pre-optimized, low-inductance connections between stages, reducing design time and EMI compliance risks. Compared to a more integrated Intelligent Power Module (IPM), the ETF81-050 offers greater flexibility in gate drive design, allowing engineers to fine-tune switching behavior for their specific application. For systems below 5kW requiring robust performance without the complexity of a fully discrete design, the Fuji Electric ETF81-050 is an ideal middle ground. Making the right choice is crucial; our guide on power semiconductor selection can provide further clarity.

Frequently Asked Questions (FAQ)

  • Q1: What are the primary considerations for the gate drive circuit for the ETF81-050?A: While the module simplifies the power stage, a robust gate drive is still crucial. Ensure your driver can provide sufficient peak current for fast switching and consider using a negative gate voltage (-5V to -15V) during the off-state to prevent parasitic turn-on, especially in noisy environments.
  • Q2: How does the integrated nature of this PIM affect thermal management?A: The single-package design centralizes the heat source, simplifying heatsink selection and mounting. It's essential to use a high-quality thermal interface material (TIM) and ensure adequate mounting pressure to achieve the low thermal resistance specified in the datasheet for optimal cooling.

For detailed pricing, availability, or to discuss how the ETF81-050 can fit into your next design, please contact us for a personalized consultation with our application specialists.

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