FUJI ETN31-055

  • ETN31-055

ETN31-055 Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; ETN31-055

· Categories: IGBT
· Manufacturer: FUJI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 107
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Content last revised on November 4, 2023

Manufacturer Part Number: ETN31-055Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-D3Manufacturer: Fuji Electric Co LtdRisk Rank: 5.81Case Connection: COLLECTORCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 70Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-D3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 1500 WPower Dissipation-Max (Abs): 1500 WQualification Status: Not QualifiedRise Time-Max (tr): 2000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 15000 nsTurn-on Time-Max (ton): 2000 ns Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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