#Fairchild Semiconductor, #FDMS3622S, #IGBT_Module, #IGBT, FDMS3622S Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V, 3000-REEL; FDMS3622S
Manufacturer Part Number: FDMS3622SBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-N6Manufacturer Package Code: 483AJECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.91Case Connection: DRAIN SOURCEConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 70 ADrain Current-Max (ID): 17.5 ADrain-source On Resistance-Max: 0.005 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V, 3000-REEL