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Fairchild Semiconductor FDT86102LZ

  • FDT86102LZ
  • FDT86102LZ N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ, 4000-REEL; FDT86102LZ

    · Categories: IGBT
    · Manufacturer: Fairchild Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 8000148151
    MOQ: 1 PC
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    Content last revised on May 20, 2023

    Manufacturer Part Number: FDT86102LZBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G4Manufacturer Package Code: 318H-01ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.94Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 6.6 ADrain Current-Max (ID): 6.6 ADrain-source On Resistance-Max: 0.028 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 15 pFJESD-30 Code: R-PDSO-G4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.2 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ, 4000-REEL