Fairchild Semiconductor FDT86102LZ IGBT Module

Manufacturer Part Number: FDT86102LZBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G4Manufacturer Package Code: 318H-01ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.94Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 6.6 ADrain Current-Max (ID): 6.6 ADrain-source On Resistance-Max: 0.028 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 15 pFJESD-30 Code: R-PDSO-G4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.2 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ, 4000-REEL