#IXYS, #FMM110_015X2F, #IGBT_Module, #IGBT, FMM110-015X2F Power Field-Effect Transistor, 53A I(D), 150V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: FMM110-015X2FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T5Pin Count: 5ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.75Additional Feature: UL RECOGNIZED, AVALANCHE RATEDAvalanche Energy Rating (Eas): 800 mJCase Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (Abs) (ID): 53 ADrain Current-Max (ID): 53 ADrain-source On Resistance-Max: 0.02 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSIP-T5JESD-609 Code: e1Number of Elements: 2Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 180 WPulsed Drain Current-Max (IDM): 300 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 53A I(D), 150V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5