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FZ300R12KE3G Infineon 1200V 300A Single Switch IGBT Module

  • FZ300R12KE3G

FZ300R12KE3G IGBT Module In-stock / Infineon: 1200V 300A. Trenchstop 3 technology for high-efficiency VFD & UPS. 90-day warranty. Request pricing now.

· Categories: IGBT
· Manufacturer: EUPEC
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 238
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Content last revised on February 27, 2026

FZ300R12KE3G Infineon 1200V 300A Single Switch IGBT Module

The FZ300R12KE3G, a core component of the Infineon (formerly Eupec) high-power portfolio, is a high-performance single-switch IGBT Module housed in the industry-standard 62mm package. Leveraging TRENCHSTOP™ IGBT3 technology, it is specifically designed to minimize VCE(sat) and Switching Loss, offering a robust solution for high-current industrial power conversion. With a Vces of 1200V and a continuous collector current Ic of 300A, it provides an exceptional thermal margin for demanding duty cycles. For 800V DC-link bus systems requiring high current density in a 62mm footprint, the FZ300R12KE3G is the optimal choice.

What is the primary benefit of the FZ300R12KE3G Trenchstop 3 technology? It significantly reduces switching losses and conduction heat compared to legacy planar architectures, enabling higher switching frequencies without compromising Thermal Management. This module offers 1200V | 300A | VCE(sat) 1.70V and ensures long-term reliability through its specialized EmCon high-speed diode integration. By optimizing the trade-off between switching speed and softness, it allows engineers to simplify Gate Drive design while maintaining strict EMC compliance.

Application Scenarios & Value

Achieving System-Level Benefits in High-Power Conversion

In the field of high-power industrial electronics, engineers frequently encounter the challenge of managing thermal accumulation during peak load cycles. For instance, in a Variable Frequency Drive (VFD) for heavy industrial pumps, the FZ300R12KE3G addresses the "startup surge" challenge by providing a high Short-Circuit Withstand Time of 10µs. This allows the system controller sufficient time to detect and respond to fault conditions before catastrophic failure occurs. The low VCE(sat) of 1.70V (at 125°C) directly translates to lower heatsink requirements, enabling more compact cabinet designs.

Beyond motor control, this module is a standard selection for UPS (Uninterruptible Power Supply) systems and Solar Inverter stages. In Solar Inverter topologies, the FZ300R12KE3G enables higher conversion efficiency, which is critical for meeting strict grid-tie regulations. For applications requiring different configurations or higher current handling, the FZ400R12KE3 offers a 400A rating in the same footprint, while systems designed for half-bridge topologies might look at the FF300R12KE3. Integrating this module into your design ensures compatibility with high-efficiency IEC 61800-3 standards and supports the transition toward more sustainable industrial power grids.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

Parameter Description Symbol Rated Value Unit
Collector-Emitter Voltage Vces 1200 V
Continuous DC Collector Current (Tc=80°C) Ic 300 A
Repetitive Peak Collector Current Icrm 600 A
Collector-Emitter Saturation Voltage (Tj=125°C) Vce(sat) 1.70 V
Total Power Dissipation (Tc=25°C) Ptot 1450 W
Gate-Emitter Peak Voltage Vges +/-20 V

Download the FZ300R12KE3G datasheet for detailed specifications and performance curves.

FAQ

Engineering Insights for System Implementation

How does the low VCE(sat) of 1.70V directly impact heatsink selection and overall power density?
Lower VCE(sat) reduces the conduction losses, which are the primary source of heat in high-power modules. For a 300A load, even a 0.1V reduction in VCE(sat) saves 30W of heat per switch. This thermal headroom allows engineers to either use a smaller heatsink or increase the switching frequency, effectively boosting the power density of the entire inverter stage.

What are the recommended Gate Drive considerations for the FZ300R12KE3G?
Due to its TRENCHSTOP™ IGBT3 structure, the module requires a precise Gate Drive voltage, typically +15V for turn-on and -5V to -15V for reliable turn-off to prevent parasitic turn-on via the Miller effect. Using a Miller Clamp is highly recommended in high-noise industrial environments.

Does this module support parallel operation for higher current requirements?
Yes, the FZ300R12KE3G features a positive temperature coefficient of VCE(sat). This means that as the device heats up, its resistance increases, naturally forcing current to balance between parallel modules. This characteristic is vital for achieving reliable IGBT Paralleling without complex active current-sharing circuits.

Is the 62mm package optimized for specific mechanical stresses?
The industry-standard 62mm housing is designed for high Mechanical Robustness. It provides excellent vibration resistance and creepage distances suitable for 1200V operation in polluted environments, such as those found in mining or outdoor Wind-to-Grid Conversion stations.

Technical & Design Deep Dive

The Trenchstop 3 Architecture: Vertical Efficiency vs. Planar Limitations

The TRENCHSTOP™ IGBT3 technology within the FZ300R12KE3G represents a paradigm shift from traditional planar IGBTs. To visualize the difference, think of the Trenchstop structure as a vertical highway for electrons. In older planar designs, electrons had to navigate a winding, horizontal path through the silicon surface before moving vertically, similar to driving through a congested city center with many turns. The "Trench" design carves deep, vertical channels through the substrate, allowing electrons to move directly and swiftly from the emitter to the collector.

This vertical optimization significantly reduces the bulk resistance of the silicon, leading to the low VCE(sat) noted in the specifications. Furthermore, by incorporating a "Field Stop" layer at the bottom of the drift region, Infineon has succeeded in thinning the wafer while maintaining a high Voltage rating. This thinner wafer means that the stored charge during the "on" state is lower, resulting in a much faster turn-off and drastically reduced Switching Loss. For the power engineer, this means the module can run cooler at the same frequency as a planar device or run faster to reduce the size of passive filter components.

Industry Insights & Strategic Advantage

Powering the Future of High-Efficiency Industrial Grids

As global regulations for energy efficiency tighten, particularly under the umbrella of Industrial 4.0 and carbon neutrality initiatives, the demand for IGBT Modules with lower losses has become a strategic priority. The FZ300R12KE3G aligns with these trends by enabling Variable Frequency Drive (VFD) and Servo Drive systems to achieve higher efficiency ratings, such as IE4 or IE5 motor standards. According to Infineon technical roadmaps, the integration of TRENCHSTOP™ technology has been a primary driver in reducing the global energy footprint of industrial pumps and fans.

Strategically, choosing a 62mm single-switch module allows manufacturers to maintain a modular and scalable inverter platform. Instead of redesigning an entire power stage for different power levels, engineers can leverage the standardized mechanical footprint of the FZ300R12KE3G. This modularity reduces the Total Cost of Ownership (TCO) and accelerates time-to-market. As the industry moves toward 800V platforms and higher frequency switching, the efficiency gains provided by the 1200V IGBT3 generation remain a benchmark for reliable, high-power performance in the field. For more information on emerging trends, see the Engineer's Ultimate Guide to IGBT Modules.

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