Infineon FZ400R12KE3 IGBT Module: Engineering for High-Efficiency Power Conversion
Content last revised on October 7, 2025.
A Foundation for Robust and Efficient High-Power Systems
Delivering Consistent Performance Through Advanced IGBT3 Technology
The Infineon FZ400R12KE3 is a 1200V, 400A half-bridge IGBT module designed for high-reliability power conversion systems. Leveraging Infineon's proven TRENCHSTOP™ IGBT3 technology, this module offers a meticulously optimized balance between conduction and switching losses, crucial for demanding applications. Key specifications include: 1200V | 400A | V_CE(sat) of 1.70V. This design ensures both high efficiency and excellent thermal performance. It directly addresses the engineering need for robust power stages that can handle significant loads without compromising on efficiency. For industrial drives requiring precise control under heavy load conditions, the FZ400R12KE3's low saturation voltage and robust Safe Operating Area (SOA) provide the optimal foundation.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Drives and Renewable Energy
The FZ400R12KE3 is engineered to excel in applications where efficiency and long-term reliability are paramount. Its robust thermal and electrical characteristics make it an ideal choice for the core of high-power converters and inverters.
A key challenge in designing Variable Frequency Drives (VFDs) for industrial motors is managing the thermal load generated during operation, especially under fluctuating load cycles. The FZ400R12KE3's low collector-emitter saturation voltage (V_CE(sat)) of 1.70V (typical at nominal current) directly translates to lower conduction losses. Think of V_CE(sat) as the "toll" the current pays to pass through the switch; a lower toll means less energy is wasted as heat. This reduction in heat generation allows for smaller heatsink designs, increasing the overall power density of the VFD and reducing system costs. This efficiency is also critical in large-scale Solar Inverter and wind turbine applications, where maximizing energy yield is the primary objective.
For systems demanding even higher current capabilities within a similar voltage class, the related FZ600R12KE3 provides a 600A capacity, offering a clear upgrade path for more powerful designs.
Key Parameter Overview
Decoding the Specs for Enhanced Power Throughput
The technical specifications of the FZ400R12KE3 are tailored for high-power switching applications. The following table highlights the critical parameters that enable its performance, based on the official datasheet.
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Collector-Emitter Voltage | V_CES | T_vj = 25°C | 1200 V |
| Continuous Collector Current | I_C nom | T_C = 100°C, T_vj max = 150°C | 400 A |
| Collector-Emitter Saturation Voltage | V_CE sat | I_C = 400 A, V_GE = 15 V, T_vj = 25°C | 1.70 V (typ.) |
| Total Switching Energy | E_ts | I_C = 400 A, V_CE = 600V, V_GE = ±15V, T_vj = 125°C | 105 mJ (typ.) |
| Gate-Emitter Threshold Voltage | V_GE(th) | I_C = 16.0 mA, V_CE = V_GE, T_vj = 25°C | 5.8 V (typ.) |
| Max. Junction Temperature | T_vj max | 150°C |
Download the FZ400R12KE3 datasheet for detailed specifications and performance curves.
Technical Deep Dive
Inside the EconoPACK™ 3: A Synergy of Chip and Housing
The performance of the FZ400R12KE3 is not just a result of the silicon inside, but also the EconoPACK™ 3 housing it resides in. This industry-standard package is designed for manufacturability and thermal efficiency. It features an integrated NTC thermistor for real-time temperature monitoring, a critical element for implementing effective thermal protection strategies in the Gate Drive logic. This direct temperature feedback enables the system controller to throttle back power or initiate a shutdown if thermal limits are approached, preventing catastrophic failures. The package's internal layout is optimized for low stray inductance, which is crucial for minimizing voltage overshoots during high-speed switching events, thereby enhancing the module's overall ruggedness and reliability.
Frequently Asked Questions (FAQ)
What is the primary benefit of the TRENCHSTOP™ IGBT3 technology used in the FZ400R12KE3?The Infineon TRENCHSTOP™ IGBT3 technology provides a very low collector-emitter saturation voltage (V_CE(sat)), which significantly reduces conduction losses. This leads to higher overall inverter efficiency and lower operating temperatures for the module.
How does the typical V_CE(sat) of 1.70V impact thermal design?A lower V_CE(sat) directly reduces the power dissipated as heat during the on-state (P = V_CE(sat) * I_C). This means less heat needs to be removed from the module, allowing engineers to specify smaller, lighter, and more cost-effective heatsinks, or to push more power through the system while staying within thermal limits.
Is the FZ400R12KE3 suitable for paralleling to achieve higher current output?Yes, IGBT modules like the FZ400R12KE3 can be paralleled. However, successful paralleling requires careful gate drive design and PCB layout to ensure balanced current sharing between modules. The positive temperature coefficient of V_CE(sat) in this IGBT technology provides some assistance in balancing current, but a comprehensive design approach is essential for reliable operation.
Strategic Considerations for System Design
Building Future-Ready Power Systems
Integrating the FZ400R12KE3 into a power system design is a step towards creating a more efficient and reliable product. Its foundation in proven IGBT3 technology and the robust EconoPACK™ housing provides engineers with a component that balances performance, cost, and long-term operational stability. This strategic choice allows design teams to meet increasingly stringent energy efficiency standards and deliver systems with a lower total cost of ownership. For engineering managers and procurement specialists, specifying a module from a leading manufacturer like Infineon also ensures a stable supply chain and extensive technical support, mitigating project risks.
