## GD400HFL120C2S | Robust 1200V 400A IGBT Module for High-Reliability Power Conversion
The GD400HFL120C2S is an engineered solution for power electronics designers demanding a balance of high current capability, efficiency, and operational robustness. This half-bridge IGBT module is built to serve as the switching core in demanding applications where power density and long-term reliability are not just goals, but operational necessities. By integrating advanced semiconductor technology within a standard industrial package, it offers a streamlined path to developing powerful and efficient inverter systems.
Engineered for Performance and Durability
The GD400HFL120C2S is not just a set of ratings; it's a component designed to solve specific engineering challenges. Its core value proposition is built on several key features:
- High Power Density: With a 400A continuous collector current and a 1200V blocking voltage, this module enables the design of compact, high-output power stages for applications up to several hundred kilowatts.
- Optimized for Low Conduction Losses: The 'L' in the part number typically signifies a focus on low VCE(sat). This module leverages advanced trench-gate and field-stop (TFS) IGBT technology to minimize on-state voltage drop, which directly translates to lower heat generation and higher system efficiency, especially in low-to-medium frequency applications.
- Excellent Thermal Performance: Housed in a standard C2S package, the module is designed for efficient heat transfer to a heatsink. Its low thermal resistance ensures the silicon operates at safer temperatures, a critical factor for extending the module's operational life under heavy cyclic loading.
- Robust Safe Operating Area (SOA): The module provides a wide Safe Operating Area, including a respectable Short-Circuit Withstand Time, offering resilience against fault conditions when paired with an appropriately designed gate driver and protection circuit.
Core Application Scenarios
The specific performance characteristics of the GD400HFL120C2S make it a prime candidate for several high-power industrial applications.
Industrial Motor Drives: In high-power AC motor drives and Servo Drive systems, low conduction losses at high currents are paramount for efficiency. This module's low VCE(sat) reduces wasted energy, minimizes heatsink size, and improves the overall reliability of the drive, especially in applications like conveyors, pumps, and industrial automation.
Renewable Energy Inverters: For large-scale solar and wind power inverters, the 1200V rating provides the necessary voltage headroom to handle high DC-link voltages. The module's efficiency and thermal stability are critical for maximizing energy harvest and ensuring the inverter can operate reliably for years in harsh environmental conditions.
High-Power Welding & UPS: In welding power supplies and large Uninterruptible Power Supply (UPS) systems, the ability to handle high pulse currents and maintain thermal stability is key. The GD400HFL120C2S offers the robustness needed to manage the demanding load profiles characteristic of these power conversion tasks.
Key Technical Parameters
The following table provides a snapshot of the critical electrical and thermal ratings for the GD400HFL120C2S series. For comprehensive design-in data, including characteristic curves and package dimensions, please refer to the product datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) @ Tcase=80°C | 400 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=400A, Tj=125°C | Typ. 2.0 V |
| Total Power Dissipation (Ptot) @ Tcase=25°C | 2500 W |
| Maximum Junction Temperature (Tjmax) | 150 °C |
| Short Circuit Withstand Time (tSC) | ≥ 10 µs |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT | Typ. 0.05 K/W |
Note: Values are typical and based on the GD400HFY120C2S series datasheet. Always consult the official manufacturer's document for guaranteed maximum ratings and specific operating conditions. Download the GD400HFY120C2S Series Datasheet here.
Frequently Asked Engineering Questions (FAQ)
What are the primary drivers of failure in a module like this, and how can they be mitigated?
The most common failure modes are electrical overstress (over-voltage/over-current) and thermal overstress. Mitigation starts with a robust gate drive design that includes desaturation protection for fast short-circuit shutdown. Equally important is proper thermal management—ensuring a flat mounting surface, correct thermal interface material (TIM) application, and adequate heatsink capacity to keep the junction temperature well below the 150°C maximum under all operating conditions. For a deeper understanding, review our guide on preventing common IGBT failures.
Can the GD400HFL120C2S be used in parallel for higher current applications?
Yes, but with careful design considerations. For successful IGBT paralleling, it is critical to ensure symmetrical PCB layouts for the gate drive and power paths to minimize stray inductance mismatches. Modules should ideally be from the same manufacturing batch to have closely matched VCE(sat) and gate-emitter threshold voltages (VGE(th)). A negative gate voltage during the off-state is also highly recommended to prevent parasitic turn-on.
For application-specific design support or to discuss your power conversion project, please contact our technical team.
