#International Rectifier, #IRG4BC30FD_STRR, #IGBT_Module, #IGBT, IRG4BC30FD-STRR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRG4
Manufacturer Part Number: IRG4BC30FD-STRRPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2Manufacturer: Infineon Technologies AGRisk Rank: 5Case Connection: COLLECTORCollector Current-Max (IC): 31 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 230 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3