Sell
IRG4BC30FD-STRR,
# International Rectifier #IRG4BC30FD-STRR New Stock, IRG4BC30FD-STRR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRG4BC30FD-STRR, #IGBT_Module, #IGBT, #IRG4BC30FD_STRR
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/irg4bc30fd-strr.html
Manufacturer Part Number: IRG4BC30FD-STRRPBF
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer:
Infineon TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PSSO-G2
Manufacturer: Infineon Technologies AG
Risk Rank: 5
Case Connection: COLLECTOR
Collector Current-Max (IC): 31 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf): 230 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 100 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3