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IRG4IBC30WPBF,
# International Rectifier #IRG4IBC30WPBF New Stock, IRG4IBC30WPBF Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3; IRG4IBC30WPBF, #IGBT_Module, #IGBT, #IRG4IBC30WPBF
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Manufacturer Part Number: IRG4IBC30WPBF
Rohs Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer:
Infineon TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 6.82
Additional Feature: LOW CONDUCTION LOSS
Case Connection: ISOLATED
Collector Current-Max (IC): 17 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE
Fall Time-Max (tf): 100 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 45 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3