#International Rectifier, #IRGB14C40LPBF, #IGBT_Module, #IGBT, IRGB14C40LPBF Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAG
Manufacturer Part Number: IRGB14C40LPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.98Additional Feature: LOW SATURATION VOLTAGECase Connection: COLLECTORCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 370 VConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORGate-Emitter Thr Voltage-Max: 2.2 VGate-Emitter Voltage-Max: 12 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 125 WQualification Status: Not QualifiedRise Time-Max (tr): 4000 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3