IXGH48N60B3 Product details
IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.
The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages.
Features
●Optimized for low conduction and switching losses
●Square RBSOA
●International standard packages
Advantages
●High power density
●Low gate drive requirement
Applications
●Power Inverters
●UPS
●Motor Drives
●SMPS
●PFC Circuits
●Battery Chargers
●Welding Machines
●L amp Ballasts
Maximum ratings and characteristics
●Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :48A
Collector current Icp 1ms Icm=25°C :280A
Collector power dissipation Pc:300W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-55 to +125°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300°C
Plastic body for 10 seconds 260°C
Mounting torque(TO-247 & TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 3.0 g
