CM50DY-24H Mitsubishi 1200V 50A Dual IGBT Module

CM50DY-24H IGBT Module In-stock / Mitsubishi: 1200V 50A. High speed switching. 90-day warranty, general purpose inverter. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Mitsubishi
· Price: US$ 25
· Date Code: 2024+
. Available Qty: 400
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Content last revised on November 18, 2025

CM50DY-24H: A Technical Review of the 1200V/50A Dual IGBT Module

Engineering for Efficiency in High-Frequency Power Conversion

The Mitsubishi CM50DY-24H is a dual IGBT module engineered for high-efficiency power conversion, minimizing conduction losses through its low VCE(sat) to enable more compact and reliable inverter designs. Featuring core specifications of 1200V | 50A | 2.7V VCE(sat), this H-Series module delivers two primary engineering benefits: significantly reduced thermal load and superior energy efficiency. Its design directly addresses the need for robust performance in high-frequency switching applications by ensuring low power dissipation during operation. For industrial motor drives requiring a balance of power handling and thermal efficiency, the CM50DY-24H's low conduction loss characteristic makes it an optimal choice.

Key Parameter Overview

Decoding Key Specifications for Power Conversion Design

The technical specifications of the CM50DY-24H are foundational to its performance in demanding applications. The parameters outlined below are extracted directly from the official manufacturer's datasheet, providing engineers with the critical data needed for system modeling, thermal management, and gate drive circuit design.

Parameter Symbol Conditions Value
Absolute Maximum Ratings (Tj = 25°C)
Collector-Emitter Voltage VCES - 1200V
Gate-Emitter Voltage VGES - ±20V
Collector Current (DC) IC - 50A
Collector Current (Pulse) ICP - 100A
Collector Power Dissipation PC - 280W
Electrical Characteristics (Tj = 25°C)
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V 2.7V (Max)
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5.5V (Typ), 8.5V (Max)
Turn-On Time ton IC = 50A 1.0µs (Max)
Turn-Off Time toff IC = 50A 2.0µs (Max)
Thermal & Isolation Characteristics
Thermal Resistance (Junction to Case) Rth(j-c) IGBT 0.45°C/W (Max)
Isolation Voltage Viso AC, 1 minute 2500Vrms

Download the CM50DY-24H datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in Industrial Drives and Power Supplies

The CM50DY-24H is best suited for power conversion systems where efficiency and thermal stability are critical design drivers. Its specifications provide tangible benefits in several key industrial applications.

  • Variable Frequency Drives (VFDs): In a compact VFD, managing heat is a primary challenge. The CM50DY-24H's low VCE(sat) of 2.7V directly translates to lower conduction losses. For example, at a continuous 40A, this reduces heat dissipation compared to a device with a 3.2V VCE(sat), allowing for a smaller heatsink, reducing enclosure size, and improving the overall power density and reliability of the drive. The module's robust 1200V rating provides a crucial safety margin for systems running on 400V or 480V AC lines, effectively handling voltage transients common in industrial environments.
  • Uninterruptible Power Supplies (UPS): Efficiency is paramount in UPS systems to maximize battery runtime and minimize operating costs. The dual-IGBT configuration simplifies the design of the inverter stage, while its low switching and conduction losses contribute to a higher overall system efficiency, a key selling point for data center and industrial backup power solutions.
  • Welding Power Supplies: The module's ability to handle pulsed currents up to 100A makes it a reliable choice for the high-frequency inverter stage in modern welding equipment, ensuring precise control over the welding arc and consistent performance.

What is the primary benefit of its dual configuration? It simplifies the half-bridge topology, reducing component count and simplifying PCB layout for inverter designs. While this module is ideal for 50A applications, for systems requiring greater current handling within the same voltage class, the related CM100DY-24H offers a 100A capability.

Frequently Asked Questions

Engineering Queries on Performance and Implementation

How does the VCE(sat) of 2.7V directly impact the thermal design of a power converter?

A lower Collector-Emitter Saturation Voltage (VCE(sat)) means less power is converted into heat during the IGBT's on-state. This reduction in conduction loss (P_loss = VCE(sat) * Ic) means the device runs cooler for a given current. This allows engineers to either use a smaller, more cost-effective heatsink, increase the power output for a given thermal solution, or improve the long-term reliability of the system by operating at a lower junction temperature. For further reading on this topic, a guide on unlocking IGBT thermal performance can provide deeper insights.

What is the significance of the 2500Vrms isolation voltage for system safety and integration?

The 2500Vrms isolation rating provides a robust dielectric barrier between the high-voltage power terminals and the module's baseplate, which is typically mounted to a grounded heatsink. This is critical for operator safety and protecting low-voltage control circuits from catastrophic failure in the event of a fault. It also simplifies compliance with industrial safety standards like IEC 61800-5-1, reducing the need for additional external isolation measures in the mechanical design.

Technical Deep Dive

Analyzing the Impact of Low VCE(sat) on Thermal Performance and Efficiency

The collector-emitter saturation voltage, or VCE(sat), is one of the most critical parameters defining an IGBT's efficiency. It represents the voltage drop across the device when it is fully turned on, acting much like a resistor in the circuit. The power lost as heat during this conduction phase is a direct product of this voltage and the current flowing through it. The CM50DY-24H's maximum VCE(sat) of 2.7V at its nominal 50A current rating is a key design feature.

To put this into perspective, think of VCE(sat) as a measure of electrical 'friction.' A device with a higher VCE(sat) generates more 'frictional' heat when current passes through it. The CM50DY-24H, with its low value, is akin to a well-lubricated bearing, minimizing energy wasted as heat. This efficiency is not just an abstract benefit; it has direct consequences. In a three-phase motor drive utilizing six of these IGBTs, even a small reduction in VCE(sat) per device leads to a significant decrease in the total thermal load that the system's cooling solution must manage. This design choice by Mitsubishi contributes directly to creating more power-dense and reliable end products.

Sourcing & Technical Inquiries

As a specialized distributor, we provide access to a broad portfolio of power semiconductor modules. For technical inquiries, documentation, or to discuss your specific design requirements for the CM50DY-24H or other IGBT modules, please contact our engineering support team for detailed assistance.

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