Content last revised on September 24, 2024
IXGH48N60B3D1 Product details
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Features
• Optimized for low conduction and
switching losses
• Square RBSOA
• Anti-parallel ultra fast diode
• International standard package
Advantages
• High power density
• Low gate drive requirement
Applications
• Power Inverters
• UPS
• Motor Drives
• SMPS
• PFC Circuits
• Battery Chargers
• Welding Machines
• Lamp Ballasts
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Icm=25°C :280A
Collector power dissipation Pc:300W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-55 to +125°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300°C
Plastic body for 10 seconds 260°C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
