#IXYS, #IXGN60N60C2, #IGBT_Module, #IGBT, IXGN60N60C2 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN60N60C2
Manufacturer Part Number: IXGN60N60C2Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: MINIBLOC-4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.8Additional Feature: LOW CONDUCTION LOSS, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 480 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4