IXYS IXGQ35N120BD1

  • IXGQ35N120BD1

IXGQ35N120BD1 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN; IXGQ35N120BD1

· Categories: IGBT
· Manufacturer: IXYS
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1682
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Content last revised on November 14, 2023

Manufacturer Part Number: IXGQ35N120BD1Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: TO-3PPackage Description: TO-3P, 3 PINPin Count: 2Manufacturer: IXYS CorporationRisk Rank: 5.73Case Connection: COLLECTORCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN

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