#IXYS, #IXSK35N120BD1, #IGBT_Module, #IGBT, IXSK35N120BD1 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN; IXSK35N120B
Manufacturer Part Number: IXSK35N120BD1Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-264Package Description: TO-264, 3 PINPin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.82Collector Current-Max (IC): 70 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-264JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN