#IXYS, #IXTP3N50P, #IGBT_Module, #IGBT, IXTP3N50P Power Field-Effect Transistor, 3.6A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: IXTP3N50PPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 8.52Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 180 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 3.6 ADrain-source On Resistance-Max: 2 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 8 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 3.6A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN