Toshiba MG50Q6ES41 is a high-power insulated gate bipolar transistor (IGBT) module designed for use in motor control, power supplies, & inverters. It consists of a single IGBT rated for 600V & 50A, with maximum collector-emitter voltage of 1.8V.
MG50Q6ES41 designed for high reliability & performance, with low collector-emitter saturation voltage & high switching speed.
MG50Q6ES41 designed to be easy to use & integrate into existing systems, with robust package that can withstand high thermal & mechanical stress. It includes over-current & over-temperature protection, ensuring reliable operation in harsh environments.
#MG50Q6ES41
Voltage[V]: 1200V
Current[A]: 50A
Configuration: 6-Pack
Description N Channel IGBT (High Power Switching / Motor Control Applications)
IGBT: 50A1200V
