#IXYS, #IXTP5N50P, #IGBT_Module, #IGBT, IXTP5N50P Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: IXTP5N50PPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 8.59Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 250 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 5 ADrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 1.4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 89 WPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Pure Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3