#IXYS, #IXXN110N65C4H1, #IGBT_Module, #IGBT, IXXN110N65C4H1 Insulated Gate Bipolar Transistor, 234A I(C), 650V V(BR)CES,; IXXN110N65C4H1
Manufacturer Part Number: IXXN110N65C4H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: ,Manufacturer: IXYS CorporationRisk Rank: 1.62Collector Current-Max (IC): 234 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 175 °CPower Dissipation-Max (Abs): 880 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.35 V Insulated Gate Bipolar Transistor, 234A I(C), 650V V(BR)CES,