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IXYS IXXN110N65C4H1

  • IXXN110N65C4H1
  • IXXN110N65C4H1 Insulated Gate Bipolar Transistor, 234A I(C), 650V V(BR)CES,; IXXN110N65C4H1

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1409
    MOQ: 1 PC
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    Content last revised on May 3, 2023

    Manufacturer Part Number: IXXN110N65C4H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: ,Manufacturer: IXYS CorporationRisk Rank: 1.62Collector Current-Max (IC): 234 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 175 °CPower Dissipation-Max (Abs): 880 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.35 V Insulated Gate Bipolar Transistor, 234A I(C), 650V V(BR)CES,