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TOSHIBA MG15Q6ES51

MG15Q6ES51 Toshiba high power gtr module silicon n channel IGBT 15A 1200V

· Manufacturer: TOSHIBA
· Price: US$ 51
· Date Code: 2024+
. Available Qty: 715
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MG15Q6ES51 Specification

MG15Q6ES51 Description

TOSHIBA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

The Electrodes are Isolated from Case.
High Input Impedance.
6 IGBTs Built Into 1 Package.

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :25A
Collector current Icp 1ms Tc=25°C :50A
Collector current Ic Continuous Tc=80°C :15A
Collector current Icp 1ms Tc=80°C :30A
Collector power dissipation Pc:145W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 6 N·m

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