MG300Q1US41 Product details
GTR Module – Silicon N-Channel IGBT; TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A); Silicon N-channel IGBT GTR module for high power switching; motor control applications; 300 Amp; 1200 Volt. High power switching applications. Motor control applications.
High Power Switching Applications
Motor Control Applications
● High input impedance
● High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.)
● Low saturation voltage : VCE(sat) = 4.0V (Max.)
● Enhancement-mode
● The electrodes are isolated from case.
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2~3 N·m
