Toshiba MG300Q1US41 IGBT Module

MG300Q1US41 Product details

GTR Module – Silicon N-Channel IGBT; TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A); Silicon N-channel IGBT GTR module for high power switching; motor control applications; 300 Amp; 1200 Volt. High power switching applications. Motor control applications.

High Power Switching Applications

Motor Control Applications

● High input impedance

● High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.)

● Low saturation voltage : VCE(sat) = 4.0V (Max.)

● Enhancement-mode

● The electrodes are isolated from case.

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :300A

Collector current Icp 1ms Tc=25°C :600A

Collector power dissipation Pc:2000W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2~3 N·m