Content last revised on March 16, 2025
MG400Q2YMS3 Product details
Applications
• High-Power Switching
• Motor Controllers
Features
(1) VDSS = 1200 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching)
(2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in thermisteor.
(3) Enhancement mode.
(4) Electrodes are isolated from metal base plate.
Absolute Maximum Ratings (Note)(Tc = 25 � unless otherwise specified)
Drain-source voltage VDSS 1200V
Gate-source voltage VGSS +25/-10V
Drain current (DC) ID 400A
Drain current (pulsed) IDP 800A
Drain power dissipation PD 1350W
Channel temperature Tch +150°C
Storage temperature Tstg -40 to +150°C
Isolation voltage Viso 4000V
Mounting torque M5,M6 3.5,4.5 N·m
