Content last revised on November 5, 2023
MG50G6ES50 Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:600V Gate-Emitter voltage VGES:±20V Collector current Ic:50A Collector current Icp:100A Collector power dissipation Pc:280W Collector-Emitter voltage VCES:1200V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting screw torque 2/3 *1 N·m Toshiba IGBT-module 1200V/100A/280W
