IXYS MIXA150W1200TEH

  • MIXA150W1200TEH

MIXA150W1200TEH Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; MIXA150W1200TEH

· Categories: IGBT
· Manufacturer: IXYS
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Price Range: US$ 50 - US$ 200 (Estimated)
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Content last revised on November 13, 2023

Manufacturer Part Number: MIXA150W1200TEHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 35Manufacturer: IXYS CorporationRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 220 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 695 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 110 nsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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