#ON Semiconductor, #MMBT6517LT3G, #IGBT_Module, #IGBT, MMBT6517LT3G High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMBT6517LT3G
Manufacturer Part Number: MMBT6517LT3GBrand Name: ON SemiconductorPbfree Code: End Of LifeIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 5.23Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 350 VConfiguration: SINGLEDC Current Gain-Min (hFE): 15JEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.225 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL