#ON Semiconductor, #NSS40302PDR2G, #IGBT_Module, #IGBT, NSS40302PDR2G Low VCE(sat) Transistor, Complementary, 40 V, 6.0 A, SOIC-8 Narrow Body, 2500-REEL; NSS40302PDR2G
Manufacturer Part Number: NSS40302PDR2GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOICPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8Manufacturer Package Code: 751-07ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.11Collector Current-Max (IC): 3 ACollector-Emitter Voltage-Max: 40 VConfiguration: SEPARATE, 2 ELEMENTSDC Current Gain-Min (hFE): 180JESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPN AND PNPPower Dissipation-Max (Abs): 0.783 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Low VCE(sat) Transistor, Complementary, 40 V, 6.0 A, SOIC-8 Narrow Body, 2500-REEL