#ON Semiconductor, #NTLJD2104PTAG, #IGBT_Module, #IGBT, NTLJD2104PTAG Power MOSFET 12V 4.3A 90mOhm Dual P-Channel WDFN2x2, WDFN6 2x2, 0.65P, 3000-REEL; NTLJD2104PTAG
Manufacturer Part Number: NTLJD2104PTAGBrand Name: ON SemiconductorPbfree Code: End Of LifeIhs Manufacturer: ON SEMICONDUCTORPart Package Code: DFNPackage Description: 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PINPin Count: 6Manufacturer Package Code: 506ANECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.25Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 3.5 ADrain Current-Max (ID): 2.4 ADrain-source On Resistance-Max: 0.12 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-XDSO-N6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2.3 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime Power MOSFET 12V 4.3A 90mOhm Dual P-Channel WDFN2x2, WDFN6 2x2, 0.65P, 3000-REEL