#STMicroelectronics, #PD20010S_E, #IGBT_Module, #IGBT, PD20010S-E 10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package; PD20010S-E
Manufacturer Part Number: PD20010S-EBrand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: FLATPACK, R-PDFP-F2Pin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 8.21Additional Feature: ESD PROTECTION, HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 5 ADrain Current-Max (ID): 5 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-PDFP-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 59 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package