#STMicroelectronics, #PD57030S_E, #IGBT_Module, #IGBT, PD57030S-E 30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57030S-E
Manufacturer Part Number: PD57030S-EBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-F2Pin Count: 2ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 2.02Additional Feature: HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-F2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 52.8 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: FLATTerminal Position: DUALTime 30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package