Infineon FF200R12KS4 | High-Efficiency 1200V Dual IGBT Module
The Infineon FF200R12KS4 is an industry-standard 1200V, 200A dual IGBT module engineered for high-performance power conversion systems. Housed in the robust EconoDUAL™ 3 package, this module represents a cornerstone solution for designers seeking a balance of efficiency, thermal performance, and proven reliability in demanding industrial applications.
- Voltage and Current Rating: 1200V Collector-Emitter Voltage (VCES) and 200A Nominal Collector Current (IC nom).
- Core Technology: Features Infineon's highly regarded TRENCHSTOP™ IGBT3 technology, optimized for low conduction and switching losses.
- Configuration: Half-bridge (dual) configuration simplifies inverter and chopper topologies.
- Integrated Features: Includes a fast, soft-recovery anti-parallel diode (Emitter Controlled Diode) and an NTC thermistor for real-time temperature monitoring.
Technical Deep Dive: The Engineering Advantage
The performance of the FF200R12KS4 is rooted in two key design elements: the silicon-level technology and the package-level engineering. Understanding these provides a clear picture of its value in a power system.
First, the TRENCHSTOP™ IGBT3 technology is the workhorse behind the module's efficiency. Unlike earlier planar designs, this technology uses a vertical trench gate structure combined with a field-stop layer. This architecture drastically reduces the collector-emitter saturation voltage (VCE(sat)), directly cutting down on conduction losses during the on-state. Simultaneously, the field-stop layer helps to rapidly sweep out charge carriers during turn-off, minimizing the "tail current" and thus lowering switching losses (Eoff). For a deeper look into the core principles of IGBTs, explore our guide on the deconstruction of the IGBT structure.
Second, the EconoDUAL™ 3 package incorporates features that enhance both performance and reliability. The inclusion of an auxiliary Kelvin Emitter connection is a critical feature. By providing a dedicated return path for the gate driver circuit, it bypasses the stray inductance of the main power emitter bond wires. This results in cleaner gate signals, reduced voltage overshoots, and the ability to switch the IGBT faster and more reliably—a crucial factor in modern high-performance servo drives.
Application Scenarios & Value Proposition
The technical characteristics of the Infineon FF200R12KS4 translate directly into tangible benefits across several key industrial applications.
- Variable Frequency Drives (VFDs): In motor control, efficiency is paramount. The low VCE(sat) of this module reduces power dissipation, leading to lower operating temperatures and allowing for smaller, more cost-effective heatsink designs. This enables the creation of more compact and energy-efficient VFDs.
- Solar Inverters: The module's excellent switching characteristics (low Eon/Eoff) and ability to operate at frequencies up to 20 kHz are ideal for solar applications. Higher switching frequencies enable the use of smaller and lighter magnetic components, increasing the power density and reducing the overall system cost of the solar inverter.
- Uninterruptible Power Supplies (UPS): For mission-critical UPS systems, reliability and efficiency are non-negotiable. The FF200R12KS4's robust Safe Operating Area (SOA) and the integrated NTC for thermal monitoring provide the layers of protection necessary to ensure continuous, reliable operation.
Key Parameter Overview
The following table provides a quick reference for the essential electrical and thermal characteristics of the FF200R12KS4. For a complete set of specifications, performance curves, and application notes, please refer to the official datasheet.
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | Tvj = 25°C | 1200 V |
| Continuous Collector Current | IC nom | - | 200 A |
| Collector-Emitter Saturation Voltage | VCE sat (typ.) | IC = 200 A, VGE = 15 V, Tvj = 25°C | 1.70 V |
| Total Power Dissipation | Ptot | TC = 25°C, Tvj max = 150°C | 1070 W |
| Thermal Resistance, Junction-to-Case | RthJC | Per IGBT | 0.11 K/W |
For detailed design-in data, download the Infineon FF200R12KS4 Datasheet.
Engineering Q&A: Common Design Questions
What is the primary benefit of using a module with an integrated NTC thermistor?
The integrated NTC provides a direct and accurate way to monitor the module's baseplate temperature. This data is invaluable for the system's control logic. It enables the implementation of precise thermal protection schemes, such as derating the output power as the temperature rises or triggering a controlled shutdown before a catastrophic thermal runaway can occur. This proactive approach to thermal management is fundamental to building a long-lasting and reliable power system.
Are there special considerations when paralleling the FF200R12KS4 for higher power output?
Yes. While the FF200R12KS4's positive temperature coefficient of VCE(sat) helps with static current sharing, successful paralleling requires careful engineering. Key considerations include ensuring a perfectly symmetrical PCB layout to equalize stray inductances, using individual gate resistors for each module to dampen oscillations, and designing a busbar structure that guarantees equal current distribution. For complex paralleling arrangements or high-frequency designs, it is highly recommended to contact our technical team for application-specific guidance.
