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Mitsubishi PM50CSE120 New IGBT Module

#Mitsubishi, #PM50CSE120, #IGBT_Module, #IGBT, PM50CSE120 IGBT Module Dual 100A /1000V;

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2021+
. Available Qty: 203
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PM50CSE120 Specification

Sell PM50CSE120, #Mitsubishi #PM50CSE120 New Stock, PM50CSE120 IGBT Module Dual 100A /1000V;, #IGBT_Module, #IGBT, #PM50CSE120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/pm50cse120.html

#PM50CSE120 FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.b) Using  new  Diode  which  is  designed  to  get  soft  reverserecovery characteristics.

•3φ 50A, 1200V Current-sense IGBT for 15kHz switching

•  Monolithic gate drive & protection logic

•  Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

•  Acoustic noise-less 5.5/7.5kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:328W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

IGBT Module Dual 100A /1000V

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