Mitsubishi PM300RLA060 IGBT Module

PM300RLA060 Description

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.

For example, typical Vce(sat)=1.5V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.

c) Current rating of brake part increased.

50% for the current rating of inverter part.

•3φ 300A, 600V Current-sense IGBT type inverter

• 150A, 600V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available

from upper arm devices)

• Acoustic noise-less 30kW class inverter application

• UL Recognized

VCES Collector-Emitter Voltage 600V

±IC Collector Current  300A

±ICP Collector Current (Peak) 600A

PC Collector Dissipation1041W

Tj Junction Temperature –20 ~ +150°C

IC Collector Current 150A

ICP Collector Current (Peak) 300A

PC Collector Dissipation 595W

VR(DC) FWDi Rated DC Reverse Voltage 600V

IF FWDi Forward Current 150A

Tj Junction Temperature –20 ~ +150°C

Three Phase IGBT Inverter + Brake 300 Amperes/600 Volts