Powersem PSND200E/12 IGBT Module

PSND 200E/12 Features

•Package with screw terminals

•Isolation voltage 3000 V∼

•Planar glass passivated chips

•Short recovery time

•Low forward voltage drop

•Short recovery behaviour

•UL registered, E 148688

Applications

•Inductive heating and melting

•Free wheeling diode in converters and motor control circuits

•Uninterruptible power supplies    (UPS)

•Ultrasonic cleaners and  welders Advantages

•High reliability circuit operation

•Low voltage peaks for reduced

protection   circuits

•  Low noise switching

•  Low  losses

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:156A

Collector current Icp:312A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:3000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 5 N·m

Weight 270g

IGBT Module Ifav 312A Vrrm 1200V