Powersem PSND200E/12 | Robust 1200V/200A Fast Recovery Dual Diode Module
The Powersem PSND200E/12 is an industrial-grade dual diode module engineered for reliability and performance in demanding power conversion systems. It combines a high voltage rating with fast recovery characteristics in a rugged, industry-standard package, making it an ideal choice for engineers designing efficient and durable high-power electronics.
Core Features at a Glance
- High Blocking Voltage: 1200V VRRM provides a substantial safety margin for systems operating on 400V and 480V AC lines.
- High Current Capability: Rated for an average forward current (IFAV) of 200A, suitable for medium- to high-power applications.
- Optimized Switching Performance: A typical reverse recovery time (trr) of 160 ns ensures low switching losses and efficient operation in switched-mode applications.
- Robust Mechanical Design: Features an electrically isolated baseplate using Al2O3 DBC (Direct Bonded Copper) technology for superior thermal performance and simplified assembly.
Application Scenarios & Engineering Value
The PSND200E/12 is not just a component; it's a solution to common engineering challenges across various industries. Its balanced feature set delivers tangible value in the following applications:
- Variable Frequency Drives (VFDs): In the input rectifier stage of a Variable Frequency Drive (VFD), its fast recovery minimizes losses and reduces EMI generation. When used as a freewheeling diode in the inverter stage, it protects the IGBTs from damaging voltage spikes during turn-off, a critical function for motor control reliability.
- Welding Power Supplies: The high current rating and robust thermal design of the PSND200E/12 are essential for the output rectifier stages of welding equipment. It can withstand the pulsed, high-current nature of welding arcs while maintaining stable operation.
- Uninterruptible Power Supplies (UPS): In double-conversion UPS systems, this module serves as a highly efficient rectifier and bypass diode. Its low forward voltage drop contributes directly to higher overall system efficiency and reduced cooling requirements.
- Battery Charging Systems: For high-power DC chargers, the module provides a reliable and efficient rectification solution, capable of handling continuous high currents with excellent thermal stability.
Technical Deep Dive: The Balance of Performance and Reliability
Two key characteristics define the engineering excellence of the Powersem PSND200E/12: its switching-conduction loss profile and its thermal architecture.
First, the module strikes a deliberate balance between forward voltage drop (VF) and reverse recovery time (trr). A low VF (typ. 1.25V at 200A) reduces conduction losses, which are dominant in applications with high duty cycles. Simultaneously, the fast trr minimizes switching losses during diode turn-off. This optimization makes the module highly effective for systems operating in the typical industrial frequency range of 5-20 kHz, where both loss components are significant. For engineers, this translates to a smaller heatsink, higher power density, and improved system efficiency over less-optimized diodes.
Second, the mechanical design prioritizes thermal management and electrical isolation. The use of a Direct Bonded Copper substrate provides a low thermal resistance path from the diode junction to the case (Rth(j-c) = 0.2 K/W), ensuring heat is evacuated efficiently. This superior thermal transfer is key to long-term reliability and allows the device to operate closer to its 150°C maximum junction temperature. The integrated electrical isolation (3000V~) simplifies mounting directly to a common heatsink, reducing assembly complexity and cost compared to using discrete, non-isolated components.
Key Parameters Overview
The following table provides a summary of the critical electrical and thermal specifications for the PSND200E/12. For comprehensive characteristic curves and application notes, download the official datasheet.
| Parameter | Symbol | Value |
|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 V |
| Average Forward Current (per diode) | IFAV | 200 A |
| Forward Voltage (Tj=25°C, IF=200A) | VF | 1.45 V (max) |
| Reverse Recovery Time (typ.) | trr | 160 ns |
| Thermal Resistance, Junction to Case (per diode) | Rth(j-c) | 0.2 K/W |
| Maximum Junction Temperature | Tjmax | 150 °C |
Frequently Asked Questions (FAQ)
1. Can the PSND200E/12 be used as a freewheeling diode for an IGBT module?
Absolutely. With a 1200V rating, it is perfectly matched to work alongside 1200V IGBT modules. Its fast recovery characteristics are essential for this role, as they reduce the turn-on losses in the corresponding IGBT and limit reverse-recovery-induced voltage overshoots.
2. What is the benefit of the dual diode series configuration?
The internal series connection with a center tap (terminal 2) offers flexibility. It's ideally suited for creating a half-bridge rectifier or a bi-directional chopper circuit with a single module. This reduces component count, simplifies the busbar layout, and minimizes parasitic inductance compared to using two separate discrete diodes.
3. How do I approach heatsink selection for this module?
Heatsink selection depends on your application's load profile (current, duty cycle, switching frequency) and ambient temperature. Start by calculating the total power loss (conduction loss + switching loss) using the graphs in the datasheet. Then, use the Rth(j-c) value and your desired maximum junction temperature to determine the required case-to-ambient thermal resistance (Rth(c-a)) for your heatsink. If you require assistance with thermal calculations for your specific design, please contact our technical team.
