Mitsubishi RM50HA-24F | Robust 1200V/50A IGBT for High-Reliability Power Systems
The Mitsubishi RM50HA-24F is an industry-proven dual IGBT module engineered for durability and efficiency in demanding power conversion applications. As part of Mitsubishi's established F-series, this device offers a finely-tuned balance of low conduction losses, robust construction, and straightforward integration, making it a go-to component for engineers designing systems where long-term reliability is non-negotiable.
- Core Specification: 50A collector current and a 1200V collector-emitter voltage, ideal for 400/480VAC line-powered systems.
- High Efficiency: Features a low saturation voltage (VCE(sat)) to minimize conduction losses, directly translating to lower operating temperatures and reduced heatsink requirements.
- Simplified Thermal Design: Built with an electrically isolated baseplate, which simplifies mounting procedures and improves thermal transfer to the heatsink.
- Proven Reliability: Encased in a standard industrial package, the RM50HA-24F is designed for high thermal and power cycling capability, ensuring a long service life.
Key Parameter Overview
The following table outlines the critical electrical and thermal characteristics of the RM50HA-24F module. These parameters are fundamental for system-level simulation, thermal management design, and performance evaluation. For a comprehensive overview of the F-Series, you can download the series datasheet for reference.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Collector Current (Ic) | 50A |
| Collector-Emitter Saturation Voltage (Vce(sat)) Typ. @ Ic=50A | 2.7V |
| Gate-Emitter Voltage (Vges) | ±20V |
| Package Type | Standard Dual IGBT Module |
| Isolation Voltage (Visol) | 2500V (AC for 1 minute) |
Application Scenarios & Value Proposition
The robust design of the RM50HA-24F makes it exceptionally well-suited for a range of medium-power industrial applications. Its value is demonstrated not just by its specifications, but by how they solve real-world engineering challenges.
- Variable Frequency Drives (VFDs): In motor drives up to ~15 kW, the module's low VCE(sat) is critical. It directly reduces the heat generated within the drive's enclosure, allowing for more compact designs or operation in higher ambient temperatures without derating.
- Uninterruptible Power Supplies (UPS): Reliability is paramount in UPS systems. The RM50HA-24F's proven package technology and high thermal cycling capability ensure it can withstand the strenuous load changes and continuous operation expected in critical backup power applications.
- Welding Power Supplies: The module's robust Safe Operating Area (SOA) allows it to handle the high pulse currents characteristic of welding applications, providing the durability needed for consistent performance in harsh industrial environments.
Technical Deep Dive: The Engineering Behind the Performance
The performance of the RM50HA-24F is rooted in Mitsubishi's mature planar IGBT technology, optimized for frequencies typically found in motor control and power conversion (2-15 kHz). The key is the trade-off between conduction and switching losses. This device is intentionally biased towards minimal conduction loss. This design choice is particularly beneficial in applications with high duty cycles, where the IGBT spends more time in the 'on' state. Lower conduction losses mean less power dissipated as heat, which simplifies the entire thermal management strategy and improves overall system efficiency.
Furthermore, the internal construction, featuring a copper baseplate isolated by a ceramic substrate (typically Alumina or AlN), provides excellent thermal conductivity while ensuring high electrical isolation. This allows multiple modules to be mounted on a single, grounded heatsink without the need for additional, thermally resistive insulating pads, streamlining assembly and maximizing heat dissipation.
Frequently Asked Questions (FAQ)
What are the ideal gate drive conditions for the RM50HA-24F?
For optimal performance and to prevent parasitic turn-on, a gate drive voltage of +15V for turn-on and a negative voltage between -5V and -15V for turn-off is recommended. Using a negative gate voltage provides a significant noise margin, preventing dV/dt-induced turn-on, which is a common challenge in bridge configurations. A dedicated gate driver IC with sufficient current capability is essential for minimizing switching losses.
Can the RM50HA-24F be used in parallel for higher current applications?
While paralleling is technically possible, it requires careful engineering. Devices must be matched for Vce(sat) and Vge(th) to ensure proper current sharing. More critically, the physical layout of the busbars and gate drive circuitry must be symmetrical to balance stray inductances. For applications requiring significantly more than 50A, it is often more reliable and cost-effective to select a single, higher-current IGBT module. If paralleling is necessary, please contact our technical team for application support.
