Vishay Siliconix SIR838DP-T1-GE3 IGBT Module

Manufacturer Part Number: SIR838DP-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-XDSO-C5Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.8Avalanche Energy Rating (Eas): 45 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (Abs) (ID): 35 ADrain Current-Max (ID): 35 ADrain-source On Resistance-Max: 0.033 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDSO-C5Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 96 WPulsed Drain Current-Max (IDM): 60 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTime N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel