Semikron SKM400GB125D IGBT Module

SKM400GB125D Features:
Low inductance case
Short tail current with low temperature dependence
High short Circuit capability, self limiting to 6 x I cnom
Fast & soft inverse CAL diodes
Isolated copper baseplate using DBC Direct Copper Bonding Technology
Large clearance (13 mm) and creepage distances (20 mm)
Typical Applications:
Switched mode power supplies at  f sw  > 20kHz
Resonant inverters up to 100 kHz Inductive heating
Electronic welders at f sw > 20 kHz SKM400GB125D
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:800A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 325g
IGBT Array & Module Transistor Dual N Channel 400 A 3.3 V 1200V Module