Content last revised on May 2, 2024
Features
Round main terminals (2 mm ∅)
• Easy drilling of PCB
• Input diodes glass passivated
• 1400 V PIV
• High I2
t rating (inrush current)
• IGBT is latch-up free, homogeneous NPT silicon-structure
• High short circuit capability,
self limiting to 6 * Icnom
• Fast & soft CAL diodes8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
• Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications:
Input rectifier bridge (B6U) with
brake chopper for PWM inverter
drives using SEMITRANS
SKM 75GD123D
1) Tcase = 25 °C, unless otherwise
specified 2) IF = – IC, VR = 600 V,
– diF/dt = 800 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... - 15 V
8) CAL = Controlled Axial Lifetime
Technology.
Junction Temperature Tj 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 90 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 200 Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 690 Watts
IGBT Modules SKD100GAL123D Input bridge B6U with brake chopper 1200V/100-200A/690W
