Semikron SKD100GAL123D IGBT Module

Features Round main terminals (2 mm ∅) • Easy drilling of PCB • Input diodes glass passivated • 1400 V PIV • High I2 t rating (inrush current) • IGBT is latch-up free, homogeneous NPT silicon-structure • High short circuit capability, self limiting to 6 * Icnom • Fast & soft CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (9 mm) and creepage distances (13 mm). Typical Applications: Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D 1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 600 V, – diF/dt = 800 A/µs, VGE = 0 V 3) Use VGEoff = -5 ... - 15 V 8) CAL = Controlled Axial Lifetime Technology. Junction Temperature Tj 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 90 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 200 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 690 Watts IGBT Modules SKD100GAL123D Input bridge B6U with brake chopper 1200V/100-200A/690W