#Semikron, #SKM200GAL176D, #IGBT_Module, #IGBT, SKM200GAL176D POWER IGBT TRANSISTOR ;
SKM200GAL176D Features: • MOS input (voltage controlled) • N channel, Homogeneous Si • Low inductance case • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes8) • Isolated copper baseplate sing DCB Direct Copper Bonding • Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: • AC inverter drives on mains 575 - 750 VAC • DC bus voltage 750 - 1200 VDC • Public transport (auxiliary syst.) • Switching (not for linear use) 1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 1200 V, – diF/dt = 1000 A/µs, VGE = 0 V 6) The free-wheeling diodes of the GAL, GAR and D1 types have the data of the inverse diodes of SKM 300 GA 173 D 8) CAL = Controlled Axial Lifetime Technology. Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1700V Gate-Emitter voltage VGES:±20V Collector current Ic:220A Collector current Icp:440A Collector power dissipation Pc:1250W Collector-Emitter voltage VCES:4000V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C POWER IGBT TRANSISTOR