Semikron SKM200GAL176D IGBT Module

SKM200GAL176D Features:

• MOS input (voltage controlled)

• N channel, Homogeneous Si

• Low inductance case

• Very low tail current with low temperature dependence

• High short circuit capability, self limiting to 6 * Icnom

• Latch-up free

• Fast & soft inverse CAL diodes8)

• Isolated copper baseplate sing DCB Direct Copper Bonding

• Large clearance (13 mm) and creepage distances (20 mm).

Typical Applications:

• AC inverter drives on mains 575 - 750 VAC

• DC bus voltage 750 - 1200 VDC

• Public transport (auxiliary syst.)

• Switching (not for linear use)

1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 1200 V, – diF/dt = 1000 A/µs, VGE = 0 V

6) The free-wheeling diodes of the GAL, GAR and D1 types have the data of the inverse diodes

of SKM 300 GA 173 D

8) CAL = Controlled Axial Lifetime Technology.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1700V

Gate-Emitter voltage VGES:±20V

Collector current Ic:220A

Collector current Icp:440A

Collector power dissipation Pc:1250W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

POWER IGBT TRANSISTOR